A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure-Reference-Cited by-同舟云学术

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A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Published:2016-04-11 Issue:15 Volume:108 Page:153505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Tsung-Ling¹,Chang Hsiang-Yu¹,Lou Jesse Jen-Chung²,Tseng Tseung-Yuen¹

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

2. Department of Energy Information Engineering, School of Software and Microelectronics, Peking University, Wuxi 214125, China

Funder

Ministry of Science and Technology (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4946006

Reference17 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Memristive devices for computing

3. Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

4. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

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