Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Full-composition-graded InxGa1−xN films grown by molecular beam epitaxy

Published:2020-11-02 Issue:18 Volume:117 Page:182101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng X. T.¹,Wang T.²,Wang P.¹^ORCID,Sun X. X.¹,Wang D.¹^ORCID,Chen Z. Y.¹,Quach P.¹^ORCID,Wang Y. X.¹,Yang X. L.¹,Xu F. J.¹^ORCID,Qin Z. X.¹,Yu T. J.¹^ORCID,Ge W. K.¹,Shen B.¹,Wang X. Q.¹³^ORCID

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing 100871, China

2. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

National Key Research and Development Program of China

Beijing Outstanding Young Scientist Program

National Natural Science Foundation of China

Science Challenge Project

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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