Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Author:
Affiliation:
1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Funder
National Basic Research Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960765
Reference24 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Optical bandgap energy of wurtzite InN
4. Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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