Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1450030
Reference14 articles.
1. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
2. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
3. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
4. Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
5. Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence
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