Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer-Reference-Cited by-同舟云学术

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

Published:2017-05 Issue:18 Volume:110 Page:181102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nakai Hiroshi¹²,Sugiyama Mutsumi²,Chichibu Shigefusa F.¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Miyagi 980-8577, Japan

2. Faculty of Science and Technology/Research Institute for Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4982653

Reference34 articles.

1. Nobel Lecture: Fascinated journeys into blue light

2. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

3. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

4. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

5. GaN: Processing, defects, and devices

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