Transverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1929881
Reference24 articles.
1. Material and electrical properties of highly mismatched InxGa1−xAs on GaAs by molecular‐beam epitaxy
2. A method to tune the island size and improve the uniformity for the in situ formation of InGaAs quantum dots on GaAs
3. Size distribution of coherently strained InAs quantum dots
4. Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots
5. Optical properties of InAs quantum dots: Common trends
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