Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2943148
Reference12 articles.
1. Technical Digest, IEEE Compound Semiconductor Integrated Circuit Symposium;Chau R.,2005
2. Reaching consensus and closure on key questions, a history of success, and failure of GaAs surfaces and interfaces at the Proceedings of the Physics and Chemistry of Semiconductor Interfaces
3. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
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2. Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements;Materials Science-Poland;2013-08
3. Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces;Applied Physics Letters;2013-03-04
4. High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels;Applied Physics Express;2009-11-27
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