Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793433
Reference33 articles.
1. Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
2. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
3. GaAs interfacial self-cleaning by atomic layer deposition
4. Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications
5. Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si3N4 as gate dielectric
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2. GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation;Japanese Journal of Applied Physics;2023-12-01
3. GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices;Nanotechnology;2021-01-08
4. In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4 × 6 surface;Journal of Physics D: Applied Physics;2018-08-29
5. Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces;Applied Surface Science;2018-01
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