Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well blue–green lasers: Prediction of low threshold under tensile strain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113863
Reference14 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Compressive strain induced heavy hole and light hole splitting of Zn1−xCdxSe epilayers grown by molecular beam epitaxy;Materials Chemistry and Physics;2003-02
2. Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar;Japanese Journal of Applied Physics;2000-06-15
3. Enhanced optical gain in InGaN–AlGaN quantum wire and quantum dot lasers due to excitonic transitions;Journal of Applied Physics;2000-05-15
4. Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe–ZnMgSSe and InGaN–AlGaN pseudomorphic quantum dots;Journal of Applied Physics;1999-03
5. Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates;Journal of Applied Physics;1998-08-15
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