Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe–ZnMgSSe and InGaN–AlGaN pseudomorphic quantum dots-Reference-Cited by-同舟云学术

Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe–ZnMgSSe and InGaN–AlGaN pseudomorphic quantum dots

Published:1999-03 Issue:5 Volume:85 Page:2706-2712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jain F.,Huang W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369588

Reference27 articles.

1. Optical properties of manganese-doped nanocrystals of ZnS

2. Homogeneous precipitation of doped zinc sulfide nanocrystals for photonic applications

3. Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates

4. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

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