Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma;Plasma Sources Science and Technology;2023-08-01
2. Enhanced Transmission from Visible to Terahertz in ZnTe Crystals with Scalable Subwavelength Structures;ACS Applied Materials & Interfaces;2021-03-31
3. Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O2 plasmas;Plasma Sources Science and Technology;2020-10-01
4. Enhanced ultrabroadband antireflection properties of ZnTe crystal with sub-wavelength surface structures by maskless reactive ion etching method;Superlattices and Microstructures;2020-01
5. Modeling of ZnSe/Zn1−Mg Se quantum well laser properties;Optik;2016-04
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