Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3518717
Reference17 articles.
1. III–nitrides: Growth, characterization, and properties
2. GaN-Based RF Power Devices and Amplifiers
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4. AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111)
5. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
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2. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates;Thermal Management of Gallium Nitride Electronics;2022
3. Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy;Journal of Physics D: Applied Physics;2021-11-25
4. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures;Applied Physics Letters;2021-03-22
5. Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma;Journal of Vacuum Science & Technology A;2021-03
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