Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures-Reference-Cited by-同舟云学术

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Published:2021-03-22 Issue:12 Volume:118 Page:122105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lingaparthi R.¹^ORCID,Dharmarasu N.²^ORCID,Radhakrishnan K.²³⁴^ORCID,Ranjan A.²,Seah Tian Long Alex²,Huo Lili⁴^ORCID

Affiliation:

1. Center for OptoElectronics and Biophotonics (COEB), School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

2. Temasek Laboratories, Nanyang Technological University, Singapore 637553

3. NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

4. UMI3288 CINTRA, (CNRS/NTU/THALES), Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553

Funder

National Research Foundation Singapore

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0045910

Reference38 articles.

1. V. Kumar , G. Chen , S. Guo , B. Peres , I. Eliasevich , and I. Adesida , in Electronics Letters ( Institution of Engineering and Technology, 2005), Vol. 41, p. 1080.

2. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

3. InAlN/GaN HEMTs: a first insight into technological optimization

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