UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping-Reference-Cited by-同舟云学术

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UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping

Published:2021-04-19 Issue:16 Volume:118 Page:163501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wohlfahrt Markus¹^ORCID,Uren Michael J.¹^ORCID,Kaess Felix²^ORCID,Laboutin Oleg²,Hirshy Hassan³^ORCID,Kuball Martin¹^ORCID

Affiliation:

1. Centre for Device Thermography (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom

2. IQE KC LLC, 200 John Hancock Road, Taunton, Massachusetts 02780, USA

3. IQE Europe Limited, Cardiff CF3 0LW, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049797

Reference29 articles.

1. GaN Technology for Power Electronic Applications: A Review

2. A review of GaN HEMT broadband power amplifiers

3. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

4. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

5. Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement

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3. Bias-tunable persistent photoconductivity for photoelectric memory in van der Waals heterojunctions of black phosphorus/2D electron gas on SrTiO₃;Applied Physics Letters;2022-02-07

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