Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130530
Reference8 articles.
1. Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films
2. Investigation of charge carrier injection in silicon nitride/silicon junctions
3. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
4. Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
5. General parameterization of Auger recombination in crystalline silicon
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2. Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces;Journal of the American Chemical Society;2016-07-01
3. Enhancement of c-Si surface passivation quality by increasing in situ H2 flow rate;Materials Letters;2015-12
4. Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion;Journal of Materials Science: Materials in Electronics;2015-10-07
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