EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN‐DOPED GaP p‐n JUNCTIONS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652543
Reference9 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP
3. Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP
4. P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C
5. Equation for Hydrogen-Oxygen Explosion Limits1
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