P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C-Reference-Cited by-同舟云学术

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P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C

Published:1967-04 Issue:7 Volume:10 Page:206-208
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Logan R. A.,White H. G.,Trumbore F. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1754913

Reference5 articles.

1. Electrical and Electroluminescent Properties of Gallium Phosphide Diffusedp−nJunctions

2. Preparation and Properties of Solution‐Grown Epitaxialp—nJunctions in GaP

3. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

4. Excess Tunnel Current in Silicon Esaki Junctions

5. Electrical and Optical Properties of High-Resistivity Gallium Phosphide

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