Formation of shallowp+njunctions by BF+2implantation into thin polycrystalline Si films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357393
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1. Study of shallow trench isolation technology with a poly-Si sidewall buffer layer;Semiconductor Science and Technology;2007-12-06
2. Formation of Shallow p+n Junctions Using Different Annealing Schemes with Low Thermal Budget;Japanese Journal of Applied Physics;2000-03-01
3. Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation;Solid-State Electronics;1999-09
4. Harnessing reverse annealing phenomenon for shallow p-n junction formation;Journal of Applied Physics;1997-11-15
5. Novel Technique to Form Pt-Silicided Shallow $\bf p^{+}n$ Junctions Using Low-Temperature Processes;Japanese Journal of Applied Physics;1995-09-01
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