Novel Technique to Form Pt-Silicided Shallow $\bf p^{+}n$ Junctions Using Low-Temperature Processes
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Published:1995-09-01
Issue:Part 2, No. 9A
Volume:34
Page:L1100-L1102
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Ma Kuo-Peng,Lin Cheng-Tung,Cheng Huang-Chung
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering