Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation-Reference-Cited by-同舟云学术

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Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation

Published:1999-09 Issue:9 Volume:43 Page:1763-1767
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Juang M.H,Ou-Yang C.I,Lin C.T,Tiou H.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Generalized guide for MOSFET miniaturization

2. Development of the self-aligned titanium silicide process for VLSI applications

3. Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

4. Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

5. Formation of shallow p+n junctions by implanting BF2− ions into thin cobalt films on silicon substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A high aspect ratio silicon-fin FinFET fabricated upon SOI wafer;Solid-State Electronics;2016-12

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