Formation of shallow p+n junctions by implanting BF2− ions into thin cobalt films on silicon substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Development of the Self-Aligned Titanium Silicide Process for VLSI Applications
2. Specific contact resistivity of TiSi2to P+and n+junctions
3. Resistivities of Thin Film Transition Metal Silicides
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1. Formation of Shallow p+n Junctions Using Different Annealing Schemes with Low Thermal Budget;Japanese Journal of Applied Physics;2000-03-01
2. Improvement of Thin Palladium and Platinum Silicide Films On (100) Si Substrates By Incorporating Phosphorus Dopant;MRS Proceedings;2000
3. Shallow p/sup +/n junctions formed by using a two-step annealing scheme with low thermal budget;IEEE Electron Device Letters;1999-12
4. Formation of shallow n+p junctions by phosphorus implantation into thin polycrystalline-Si films on Si substrates and subsequent cobalt silicidation;Solid-State Electronics;1999-09
5. Effects of Phosphorus Dopant on the Thermal Stability of Thin Pd2Si and PtSi Silicide Films on (100) Si Substrates;Japanese Journal of Applied Physics;1999-07-15
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