Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers-Reference-Cited by-同舟云学术

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Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers

Published:2002-09 Issue:5 Volume:92 Page:2391-2400
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Neudeck Philip G.,Powell J. Anthony,Beheim Glenn M.,Benavage Emye L.,Abel Phillip B.,Trunek Andrew J.,Spry David J.,Dudley Michael,Vetter William M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1497456

Reference15 articles.

1. GaN: Processing, defects, and devices

2. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy

3. Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces

4. Performance limiting micropipe defects in silicon carbide wafers

5. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

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1. Interface engineering moderated interfacial thermal conductance of GaN-based heterointerfaces;Acta Physica Sinica;2023

2. A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality;Materials Science Forum;2022-05-31

3. Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy;Journal of Alloys and Compounds;2019-06

4. Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique;Journal of Crystal Growth;2014-04

5. Preparation of large step-free mesas on Si(111) by molecular beam epitaxy;physica status solidi (c);2012-08-27

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