Reduced pressure chemical vapor deposition of Si/Si1−yCy heterostructures forn-type metal–oxide–semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1497451
Reference38 articles.
1. High-speed transport in Si/Si 1−x−y Ge x C y heterostructures
2. On the feasibility of growing dilute CxSi1−xepitaxial alloys
3. Band Alignment inSi1−yCy/Si(001)andSi1−xGex/Si1−yCy/Si(001)Quantum Wells by Photoluminescence under Applied [100] and [110] Uniaxial Stress
4. Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors
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