A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model-Reference-Cited by-同舟云学术

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A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

Published:2015-10 Issue:10 Volume:22 Page:103520
ISSN:1070-664X
Container-title:Physics of Plasmas
language:en
Short-container-title:Physics of Plasmas

Author:

Gul Banat¹²^ORCID,Aman-ur-Rehman ¹

Affiliation:

1. Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Nilore, Islamabad 45650, Pakistan

2. Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp, Belgium

Funder

Higher Education Commission, Pakistan (HEC)

Publisher

AIP Publishing

Subject

Condensed Matter Physics

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934922

Reference44 articles.

1. Low-Temperature Plasma Processing of Materials: Past, Present, and Future

2. Plasma and Discharge Physics for Materials Processing

3. Top down nano technologies in surface modification of materials

4. Particle and fluid simulations of low-temperature plasma discharges: benchmarks and kinetic effects

5. Molecular dynamics for low temperature plasma–surface interaction studies

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of dilution gas on the distribution characteristics of capacitively coupled plasma by comparing SiH₄/He and SiH₄/Ar;Plasma Sources Science and Technology;2023-11-01

2. Effects of magnetic field on the secondary electron asymmetry effect in capacitively coupled plasmas;Physics of Plasmas;2021-12

3. Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas;Journal of Vacuum Science & Technology A;2021-07

4. Numerical Study of SF6/O2 Plasma Discharge for Etching Applications;Plasma Chemistry and Plasma Processing;2021-03-27

5. Numerical investigation of the effect of variation of gas mixture ratio on density distribution of etchant species (Br, Br+, Cl, Cl+, and H) in HBr/Cl2/Ar plasma discharge;The European Physical Journal D;2020-06

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