The structural and electrical properties of low‐resistance Ni contacts to InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353902
Reference4 articles.
1. Characterization of ohmic contacts to InP
2. Sputtered Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrier
3. The influence of interstitial Ga and interfacial Au2P3on the electrical and metallurgical behavior of Au‐contacted III‐V semiconductors
4. Fundamental and practical aspects of alloying encapsulated gold-based contacts to GaAs
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1. Development of Ni2P Contact Technology and its integration on III-V materials for 300 mm Si Photonics Platform;IEEE Journal of the Electron Devices Society;2021
2. Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers;Journal of Vacuum Science & Technology B;2020-01
3. Phase formation sequence in the Ti/InP system during thin film solid-state reactions;Journal of Applied Physics;2017-06-28
4. Phase formation in the Ni/n–InP contacts for heterogeneous III/V-silicon photonic integration;Microelectronic Engineering;2016-04
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