Phase formation sequence in the Ti/InP system during thin film solid-state reactions-Reference-Cited by-同舟云学术

Phase formation sequence in the Ti/InP system during thin film solid-state reactions

Published:2017-06-28 Issue:24 Volume:121 Page:245311
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ghegin E.¹²³,Rodriguez Ph.²^ORCID,Lábár J. L.⁴^ORCID,Menyhárd M.⁴^ORCID,Favier S.¹²,Sagnes I.⁵,Nemouchi F.²

Affiliation:

1. STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France

2. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

3. CNRS-C2N, Route de Nozay, 91460 Marcoussis, France

4. MTA EK MFA, Konkoly Thege M. u. 29-33, H-1121 Budapest, Hungary

5. Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Marcoussis, 91460 Marcoussis, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4990427

Reference14 articles.

1. Au/Pt/Ti contacts top‐In0.53Ga0.47As andn‐InP layers formed by a single metallization common step and rapid thermal processing

2. Interfacial reaction studies of Cr, Ni, Ti, and Pt metallization on InP

3. M. B. Takeyama , A. Noya , T. Hashizume , and H. Hasegawa , in 10th International Conference on Indium Phosphide and Related Materials (1998), pp. 627–630.

4. Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP

5. Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases

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