Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2733763
Reference20 articles.
1. Observation of quantum wire formation at intersecting quantum wells
2. Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth
3. Lasing from excitons in quantum wires
4. Formation of a high quality two‐dimensional electron gas on cleaved GaAs
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1. Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells;Materials Science in Semiconductor Processing;2023-02
2. Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110);Journal of Alloys and Compounds;2021-09
3. Flat and twin-free InAs layer growth on Ge (1 1 1) substrates;Journal of Crystal Growth;2020-08
4. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
5. Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth;Journal of Crystal Growth;2016-12
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