GaInSb/InAs/AlGaAsSb “W” quantum-well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1426267
Reference23 articles.
1. High CW power (>200 mW/facet) at 3.4 [micro sign]m from InAsSb/InAlAsSb strained quantum well diode lasers
2. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
3. Quantum Cascade Laser
4. Prediction of loss minima in infra-red optical fibres
5. High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 /spl mu/m
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1. Control of electron tunnelling by fine band engineering of semiconductor potential barriers;Nanoscale;2019
2. Recombination dynamics of photogenerated carriers in 10.4 µm-cutoff photodiodes consisting of W-structured superlattices;Conference on Lasers and Electro-Optics/International Quantum Electronics Conference;2009
3. Sources of spontaneous emission based on indium arsenide;Semiconductors;2008-06
4. Molecular beam epitaxy growth of midinfrared “W” light emitting diodes on InAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
5. Resonant-cavity light-emitting diodes (RC-LEDs) and detectors for mid-IR gas-sensing applications;IEE Proceedings - Optoelectronics;2003
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