Control of electron tunnelling by fine band engineering of semiconductor potential barriers-Reference-Cited by-同舟云学术

Control of electron tunnelling by fine band engineering of semiconductor potential barriers

Published:2019 Issue:44 Volume:11 Page:21376-21385
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao Yunhao¹²³⁴⁵,Cai Chenyuan¹²³⁴⁵,Zhang Yi⁶⁷⁸⁹⁵,Zhao Xuebing¹²³⁴⁵,Xu Yingqiang⁶⁷⁸⁹⁵,Liang Chongyun¹⁰³¹¹⁵,Niu Zhichuan⁶⁷⁸⁹⁵,Shi Yi¹²¹³¹⁴¹⁵⁵,Che Renchao¹²³⁴⁵^ORCID

Affiliation:

1. Laboratory of Advanced Materials

2. Department of Materials Science and Collaborative Innovation Centre of Chemistry for Energy Materials

3. Fudan University

4. Shanghai 200438

5. P. R. China

6. State Key Laboratory for Superlattices and Microstructures

7. Institute of Semiconductors

8. Chinese Academy of Sciences

9. Beijing 100083

10. Department of Chemistry

11. Shanghai 200433

12. National Laboratory of Solid State Microstructures

13. School of Electronic Science and Engineering and Collaborative Innovation Centre of Advanced Microstructures

14. Nanjing University

15. Nanjing 210093

Abstract

Elementary segregation and diffusion could be utilized in band engineering to modulate potential barriers for the control of electron tunnelling.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR03268A

Reference54 articles.

1. Tunneling in a finite superlattice

2. Resonant tunneling in semiconductor double barriers

3. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

4. Tunnel field-effect transistors as energy-efficient electronic switches

5. RETRACTED ARTICLE: Quantized Majorana conductance

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