High CW power (>200 mW/facet) at 3.4 [micro sign]m from InAsSb/InAlAsSb strained quantum well diode lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960873?crawler=true&mimetype=application/pdf
Reference9 articles.
1. High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m
2. Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers
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