n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers-Reference-Cited by-同舟云学术

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

Published:2021-01-11 Issue:2 Volume:118 Page:021102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Dong-Pyo¹^ORCID,Fujiki Ryoto¹,Takahashi Ryo¹,Ueshima Yusuke¹,Ueda Shintaro¹,Lu Weifang¹^ORCID,Iwaya Motoaki¹,Takeuchi Tetsuya¹,Kamiyama Satoshi¹,Akasaki Isamu¹²

Affiliation:

1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

2. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0035343

Reference40 articles.

1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. GaN Growth Using GaN Buffer Layer

4. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

5. Solid-State Light Sources Getting Smart

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