Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1797546
Reference21 articles.
1. Progress in silicon carbide semiconductor electronics technology
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5. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
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2. Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area;IEEE Electron Device Letters;2023-09
3. A multi-contact six-terminal cross-bridge Kelvin resistor (CBKR) structure for evaluation of interface uniformity of the Ti-Al alloy/p-type 4H-SiC contact;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27
4. Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces;Applied Physics Express;2023-03-01
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