A multi-contact six-terminal cross-bridge Kelvin resistor (CBKR) structure for evaluation of interface uniformity of the Ti-Al alloy/p-type 4H-SiC contact
Author:
Affiliation:
1. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu,Taiwan,R.O.C
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094097.pdf?arnumber=10094097
Reference19 articles.
1. Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology
2. Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration
3. Electrical properties and microstructure of ternary Ge∕Ti∕Al ohmic contacts to p-type 4H–SiC
4. Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system
5. High Temperature Silicon Carbide CMOS Integrated Circuits
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Metal Contact on P-Type 4H-SiC With Low Specific Contact Resistance and Micrometer-Scale Contact Area;IEEE Electron Device Letters;2023-09
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