Scattering effects of phonons in two polymorphic structures of gallium nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3226885
Reference38 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
3. Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN
4. Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
5. Dynamics of hot-electron scattering in GaN heterostructures
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1. Electron transport properties in thin InN layers grown on InAlN;Materials Science in Semiconductor Processing;2023-03
2. Piezoelectric scattering limited mobility of hybrid organic-inorganic perovskites CH3NH3PbI3;Scientific Reports;2017-02-02
3. Anisotropic intrasubband hole scattering by polar optical phonon modes in thin GaAs/AlxGa1−xAs quantum wells;Superlattices and Microstructures;2014-08
4. Derivation of Line Shape Function in the Optical Conductivity by a New Diagram Method;Advances in Condensed Matter Physics;2014
5. Shubnikov-de Haas-like oscillatory pattern of dc conductivity in a 2-dimensional indium gallium arsenide;Journal of Applied Physics;2011-07
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