Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371915
Reference40 articles.
1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
2. Strain effect on electronic and optical properties of GaN/AlGaN quantum‐well lasers
3. Dependence of optical gain on crystal orientation in wurtzite–GaN strained quantum-well lasers
4. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
5. Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure
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