Abstract
AbstractThe transport of holes through p-doped wurtzite bulk GaN and AlGaN is poor so transport of holes through GaN/AlGaN superlattices has been proposed and investigated theoretically and experimentally with experimental results showing poor transport. The reason for this poor performance is not fully understood. In this paper, the transport of holes in GaN/AlGaN wurtzite crystal superlattices is investigated through theoretical modelling, examining the role of the composition of the Al$$_x$$
x
Ga$$_{1-x}$$
1
-
x
N barrier regions and the thickness of the GaN quantum wells and the AlGaN barriers in determining the position and width of the heavy hole miniband. To consider the transport of the holes in the miniband we examine the effective mass of the miniband and possible scattering mechanisms. In particular, ionized impurity (II) scattering from ionized acceptors in the barrier regions is investigated as it is deemed to be the dominating scattering mechanism degrading hole transport. The energy position of the miniband relative to the ionized impurities and the wavefunction overlap with the ionized acceptors in the barrier regions is investigated to minimize II scattering. Some designs to optimize hole transport through wurtzite p-doped GaN/AlGaN superlattices to minimize II scattering are proposed.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献