Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121357
Reference21 articles.
1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
2. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
3. Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
4. Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates
5. Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy
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1. Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl2O4Substrates by Pulsed-Laser Deposition;Japanese Journal of Applied Physics;2006-04-21
2. Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine;Journal of Applied Physics;2003-05
3. Coordination Complexes as Precursors for Semiconductor Films and Nanoparticles;Comprehensive Coordination Chemistry II;2003
4. Photoluminescence in GaN and InGaN and their applications in photonics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
5. Chapter 3 Growth and optical properties of GaN;Processing and Properties of Compound Semiconductors;2001
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