Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Published:1997-01-27 Issue:4 Volume:70 Page:467-469
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hamdani F.,Botchkarev A.,Kim W.,Morkoç H.,Yeadon M.,Gibson J. M.,Tsen S.-C. Y.,Smith David J.,Reynolds D. C.,Look D. C.,Evans K.,Litton C. W.,Mitchel W. C.,Hemenger P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118183

Reference21 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

4. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

5. High transconductance-normally-off GaN MODFETs

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