Cracking in hydrogen ion-implanted Si∕Si0.8Ge0.2∕Si heterostructures

Author:

Shao Lin,Wang Y. Q.,Swadener J. G.,Nastasi M.,Thompson Phillip E.,Theodore N. David

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Noncuring Graphene Thermal Interface Materials for Advanced Electronics;Advanced Electronic Materials;2020-02-24

2. Ion cutting of amorphous metals by using helium ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07

3. High Quality Nano Thin Layer Silicon Transfer Using Plasma Hydrogenation;Proceedings of the Third International Symposium on Materials and Sustainable Development;2018

4. Diffusion and trapping of implanted hydrogen in a Si/Si:B/Si structure;Materials Science in Semiconductor Processing;2017-08

5. High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

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