Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation-Reference-Cited by-同舟云学术

Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

Published:2005-08-29 Issue:9 Volume:87 Page:091902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shao Lin,Lin Yuan,Lee J. K.,Jia Q. X.,Wang Yongqiang,Nastasi M.,Thompson Phillip E.,Theodore N. David,Chu Paul K.,Alford T. L.,Mayer J. W.,Chen Peng,Lau S. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2032602

Reference23 articles.

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