Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory-Reference-Cited by-同舟云学术

Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

Published:2021-12-28 Issue:24 Volume:130 Page:244501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lefevre Gauthier¹^ORCID,Dewolf Tristan²,Guillaume Nicolas¹^ORCID,Blonkowski Serge²^ORCID,Charpin-Nicolle Christelle²^ORCID,Jalaguier Eric²,Nowak Etienne²,Bernier Nicolas²,Blomberg Tom³,Tuominen Marko³,Sprey Hessel⁴,Audoit Guillaume²,Schamm-Chardon Sylvie⁵^ORCID

Affiliation:

1. LTM, Univ. Grenoble Alpes, CNRS, CEA-LETI Minatec, LTM, 38054 Grenoble, France

2. LETI, Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

3. ASM Microchemistry, Pietari Kalmin Katu 3 F 2, 00560 Helsinki, Finland

4. ASM Belgium, Kapeldreef 75, 3001 Leuven, Belgium

5. CEMES-CNRS and Universite Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France

Funder

Electronic Components and Systems for European Leadership

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0072343

Reference49 articles.

1. Resistive switching in transition metal oxides

2. Emerging memories: resistive switching mechanisms and current status

3. Resistance random access memory

4. Metal–Oxide RRAM

5. Memristive devices for computing

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