Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5025776
Reference32 articles.
1. Fundamentals of Silicon Carbide Technology
2. Ionization rates and critical fields in 4H silicon carbide
3. Measurement of high-field electron transport in silicon carbide
4. Electrical transport inn-type 4H silicon carbide
5. Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
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