Liquid‐phase epitaxial growth of (AlGa)As on polished and roughened GaP substrates for transmission photocathodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655156
Reference5 articles.
1. Ga1−xAlxAs LED Structures Grown on GaP Substrates
2. An improved GaAs transmission photocathode
3. Surface irregularities due to spiral growth in LPE layers of AlGaAs and InGaAsP
4. Dependence on Crystalline Face of the Band Bending in Cs2 O‐Activated GaAs
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Suppression of twins in GaAs layers grown on a GaP(111)B substrate by liquid phase epitaxy;Journal of Crystal Growth;1996-11
2. Uniform growth of Te-doped AlxGa1t−xAs (x = 0-0.65) on (111) B GaP substrates by liquid phase epitaxy;Journal of Crystal Growth;1991-12
3. LPE growth of Pb1-xSnxTe layers on metal-etched substrates;Journal of Crystal Growth;1980-03
4. Photoemissive detectors;Topics in Applied Physics;1980
5. An LPE growth of thick InxGa1−xAs;Journal of Crystal Growth;1978-05
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