Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
Author:
Affiliation:
1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
2. STS, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, and TELEMIC, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0029833
Reference27 articles.
1. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
2. Phase transitions in ferroelectric silicon doped hafnium oxide
3. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$
4. Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
5. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
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1. Impact of Doped Hafnium Oxides on Memory Window and Low-Frequency Noise in Ferroelectric FETs;IEEE Transactions on Electron Devices;2024-07
2. Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current;IEEE Transactions on Electron Devices;2024-02
3. Universal Compact Model of Flicker Noise in Ferroelectric Logic and Memory Transistors;IEEE Transactions on Electron Devices;2024-01
4. Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
5. Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure;IEEE Transactions on Electron Devices;2022-03
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