Structural and vibrational properties of SnxGe1-x: Modeling and experiments-Reference-Cited by-同舟云学术

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Structural and vibrational properties of SnxGe1-x: Modeling and experiments

Published:2018-07-21 Issue:3 Volume:124 Page:035105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vasin A. S.¹,Oliveira F.²,Cerqueira M. F.²³^ORCID,Schulze J.⁴,Vasilevskiy M. I.²⁵^ORCID

Affiliation:

1. Department of Physics, N. I. Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod 603600, Russia

2. Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal

3. International Iberian Nanotechnology Laboratory, Braga, Portugal

4. Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

5. QuantaLab, Universidade do Minho, Braga, Portugal

Funder

Fundação para a Ciência e a Tecnologia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030104

Reference53 articles.

1. Ge–Sn semiconductors for band-gap and lattice engineering

2. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

3. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

4. Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation

5. Achieving direct band gap in germanium through integration of Sn alloying and external strain

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1. Mid-infrared emission of germanium-tin films produced by sputtering;Journal of Vacuum Science & Technology B;2024-03-01

2. Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx;Physical Review Materials;2024-02-01

3. Local Alloy Order in a Ge1−xSnx/Ge Epitaxial Layer;Physical Review Applied;2023-08-08

4. Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles;Nanomaterials;2023-05-22

5. Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam;Journal of Applied Physics;2023-05-12

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