Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1489483
Reference17 articles.
1. Hydrogen passivation of silicon carbide by low-energy ion implantation
2. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
3. Hydrogen passivation of donors and acceptors in SiC
4. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
5. Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide
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1. Assessing the effect of H on the electronic properties of 4H-SiC;Chinese Physics B;2021-12-11
2. Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H–SiC;Optical Materials;2008-01
3. Recombination-induced athermal migration of hydrogen and deuterium in SiC;Journal of Applied Physics;2005-02
4. Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC;Physical Review B;2004-06-24
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