Hydrogen passivation of silicon carbide by low-energy ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122047
Reference10 articles.
1. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy
2. Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor phase epitaxy
3. Hydrogen passivation of donors and acceptors in SiC
4. Deuterium Incorpoation in Acceptor Doped Epitaxial Layers of 6H-SiC
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