Ellipsometric study of boron nitride thin‐film growth on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109599
Reference10 articles.
1. Growth and characterization of epitaxial cubic boron nitride films on silicon
2. Ellipsometric determination of the optical constants of C60(Buckminsterfullerene) films
3. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
4. Variable wavelength, variable angle ellipsometry including a sensitivities correlation test
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