Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351035
Reference18 articles.
1. Impurity‐induced enhancement of the growth rate of amorphized silicon during solid‐phase epitaxy: A free‐carrier effect
2. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
3. Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon
4. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
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