Accurate determination of effective quantum well thickness: Infrared absorption by transverse‐optical phonons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107844
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4. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
5. Magneto-transport in InAs/AlSb quantum wells with large electron concentration modulation
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Generation of coherent confined LO phonons under the drift of two-dimensional electrons;Physical Review B;2001-04-03
2. Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices;Physical Review B;1996-06-15
3. Influence of the interface bond type on the far‐infrared reflectivity of InAs/GaSb superlattices;Journal of Applied Physics;1995-11
4. Far-IR characterization of GaInAs/InP quantum wells and superlattices;Materials Science and Engineering: B;1994-12
5. Interface characterization of InAs/AlSb heterostructures by far infrared optical spectroscopy;Applied Physics Letters;1994-10-17
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